In 1978, this trademark right is granted and registered as No.1,342,184 in Japan, and still survives as of March 2018. In 1975, NEC's semiconductor operations unit, later NEC Electronics, currently Renesas Electronics, applied the trademark name EEPROM® to Japan Patent Office. But in general, programmable memories, including EPROM, of early 1970s had reliability problems such as the data retention periods and the number of erase/write cycle endurance. The theoretical basis of these devices is Avalanchehot-carrier injection. Most of major semiconductor manufactures, such asToshiba, Sanyo (later, ON Semiconductor), IBM, Intel, NEC (later, Renesas Electronics), Philips (later, NXP Semiconductors), Siemens (later, Infineon Technologies), Honeywell (later, Atmel), Texas Instruments, studied, invented, and manufactured some electrically re-programmable non-volatile devices until 1977. In 1972, one of electrically re-programmable non-volatile memory was invented by Fujio Masuoka at Toshiba, who is also known as the inventor of flash memory.
One of their research includes MONOS (metal-oxide-nitride-oxide-semiconductor) technology, which is used Renesas Electronics' flash memory integrated in single-chip microcontrollers until today.
These papers have been repeatedly cited by later papers and patents. They continued this study for more than 10 years. In early 1970s, some studies, inventions, and development for electrically re-programmable non-volatile memories were performed by various companies and organizations.Especially, in 1971, the earliest research report was presented at the 3rd Conference on Solid State Devices, Tokyo in Japan by Yasuo Tarui, Yutaka Hayashi, and Kiyoko Nagai at Electrotechnical Laboratory a Japanese national research institute. Many microcontrollers include both: flash memory for the firmware, and a small EEPROM for parameters and history. There is no clear boundary dividing the two, but the term 'EEPROM' is generally used to describe non-volatile memory with small erase blocks (as small as one byte) and a long lifetime (typically 1,000,000 cycles). In an EEPROM that is frequently reprogrammed while the computer is in use, the life of the EEPROM is an important design consideration.įlash memory is a type of EEPROM designed for high speed and high density, at the expense of large erase blocks (typically 512 bytes or larger) and limited number of write cycles (often 10,000). An EEPROM has a limited life for erasing and reprogramming, now reaching a million operations in modern EEPROMs. Originally, EEPROMs were limited to single byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations.
EEPROMs can be programmed and erased in-circuit, by applying special programming signals. A cross section of legacy UV-EPROM structureĮEPROM (also E 2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, integrated in microcontrollers for smart cards and remote keyless systems, and other electronic devices to store relatively small amounts of data but allowing individual bytes to be erased and reprogrammed.ĮEPROMs are organized as arrays of floating-gate transistors.
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